All MOSFET. BUK472-100B Datasheet

 

BUK472-100B Datasheet and Replacement


   Type Designator: BUK472-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-186A
 

 BUK472-100B substitution

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BUK472-100B Datasheet (PDF)

 ..1. Size:52K  philips
 buk472-100a buk472-100b.pdf pdf_icon

BUK472-100B

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

 4.1. Size:59K  philips
 buk472-100a-b.pdf pdf_icon

BUK472-100B

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

 7.1. Size:57K  philips
 buk472-60a-b 1.pdf pdf_icon

BUK472-100B

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK472 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies

 9.1. Size:55K  philips
 buk474-60h 1.pdf pdf_icon

BUK472-100B

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation

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Datasheet: BUK138-50DL , BUK139-50DL , BUK1M200-50SGTD , BUK452-100B , BUK455-100B , BUK455-200B , BUK456-100B , BUK472-100A , CS150N03A8 , BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C .

History: IRF2804S-7P | AP10TN003S | BSZ033NE2LS5 | 2SK3037

Keywords - BUK472-100B MOSFET datasheet

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