BUK472-100B Specs and Replacement
Type Designator: BUK472-100B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-186A
BUK472-100B substitution
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BUK472-100B datasheet
buk472-100a buk472-100b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK472 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup... See More ⇒
buk472-100a-b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK472 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup... See More ⇒
buk472-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK472 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies... See More ⇒
buk474-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒
Detailed specifications: BUK138-50DL , BUK139-50DL , BUK1M200-50SGTD , BUK452-100B , BUK455-100B , BUK455-200B , BUK456-100B , BUK472-100A , IRF520 , BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C .
Keywords - BUK472-100B MOSFET specs
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