BUK472-100B - описание и поиск аналогов

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK472 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK472 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK472 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation

Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B Isolated version of BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK475 -200A -200B device is intended foruse in Switched VDS Drain-source voltage 200 200 V Mode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK475-60H Isolated version of BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The device VDS Drain-source voltage 60 V is intended for use in Automotive ID Drain current (DC) 22.5 A applications, Swi

Philips Semiconductors Product specification PowerMOS transistor BUK475-60A/B Isolated version of BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK475 -60A -60B device is intended foruse in Switched VDS Drain-source voltage 60 60 V Mode Power Supplies

Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B Isolated version of BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK473 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK473-60A/B Isolated version of BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK473 -60A -60B device is intended foruse in Switched VDS Drain-source voltage 60 60 V Mode Power Supplies