All MOSFET. BUK652R7-30C Datasheet

 

BUK652R7-30C Datasheet and Replacement


   Type Designator: BUK652R7-30C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 204 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 896 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220AB
 

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BUK652R7-30C Datasheet (PDF)

 ..1. Size:369K  philips
 buk652r7-30c.pdf pdf_icon

BUK652R7-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 ..2. Size:369K  nxp
 buk652r7-30c.pdf pdf_icon

BUK652R7-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:375K  philips
 buk652r3-40c.pdf pdf_icon

BUK652R7-30C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.2. Size:183K  philips
 buk652r0-30c.pdf pdf_icon

BUK652R7-30C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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Datasheet: BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C , IRF730 , BUK6C2R1-55C , BUK6C3R3-75C , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A .

History: AONS420A70 | AONS66615

Keywords - BUK652R7-30C MOSFET datasheet

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