Справочник MOSFET. BUK652R7-30C

 

BUK652R7-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK652R7-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 204 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 896 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO-220AB
     - подбор MOSFET транзистора по параметрам

 

BUK652R7-30C Datasheet (PDF)

 ..1. Size:369K  philips
 buk652r7-30c.pdf pdf_icon

BUK652R7-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 ..2. Size:369K  nxp
 buk652r7-30c.pdf pdf_icon

BUK652R7-30C

BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:375K  philips
 buk652r3-40c.pdf pdf_icon

BUK652R7-30C

BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.2. Size:183K  philips
 buk652r0-30c.pdf pdf_icon

BUK652R7-30C

BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLI3803PBF | 2N5116UB | NCE80H12 | IMZ120R350M1H

 

 
Back to Top

 


 
.