All MOSFET. BUK755R4-100E Datasheet

 

BUK755R4-100E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK755R4-100E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 349 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 62 nS

Drain-Source Capacitance (Cd): 770 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm

Package: TO-220AB

BUK755R4-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK755R4-100E Datasheet (PDF)

1.1. buk755r4-100e.pdf Size:208K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK755R4-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Rep

3.1. buk755r2-40b buk765r2-40b.pdf Size:292K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/765R2-40B TrenchMOS standard level FET Rev. 01 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK755R2-40B in SOT78 (TO-220AB) BUK765R2-40B in SOT404 (D2-PAK). 1.2 Features TrenchMOS technology

 5.1. buk7524-55a.pdf Size:314K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK7524-55A; BUK7624-55A TrenchMOS™ standard level FET Rev. 02 — 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ techno

5.2. buk752r3-40e.pdf Size:212K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK752R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

 5.3. buk753r1-40e.pdf Size:213K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.4. buk753r5-60e.pdf Size:210K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

 5.5. buk7514-60e.pdf Size:207K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK7514-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repet

5.6. buk754r7-60e.pdf Size:210K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK754R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.7. buk753r8-80e.pdf Size:211K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.8. buk752r7-60e.pdf Size:211K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.9. buk751r6-30e.pdf Size:211K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK751R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.10. buk758r3-40e.pdf Size:212K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK758R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.11. buk7505-30a.pdf Size:51K _update_mosfet

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS transistor BUK7505-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V ’trench’ technology which features ID Drain current (DC) 75 A very low on-state resis

5.12. buk751r8-40e.pdf Size:211K _update_mosfet

BUK755R4-100E
BUK755R4-100E

BUK751R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

5.13. buk753r1-40b buk763r1-40b.pdf Size:323K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-state resist

5.14. buk7528-55.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 40 A features very low on-state resistanc

5.15. buk753r4-30b buk763r4-30b.pdf Size:108K _philips

BUK755R4-100E
BUK755R4-100E

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible

5.16. buk7535 buk7635 55a-01.pdf Size:302K _philips

BUK755R4-100E
BUK755R4-100E

BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.17. buk7540-100a 1.pdf Size:87K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7540-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT Standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 37 A very low on-state resistance.

5.18. buk7510-30 1.pdf Size:50K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7510-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

5.19. buk7518-55 2.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 57 A features very low on-state resistanc

5.20. buk75150-55a buk76150-55a.pdf Size:299K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applications Aut

5.21. buk7523-75a buk7623-75a.pdf Size:310K _philips

BUK755R4-100E
BUK755R4-100E

BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

5.22. buk7515-100a.pdf Size:218K _philips

BUK755R4-100E
BUK755R4-100E

BUK7515-100A N-channel TrenchMOS standard level FET Rev. 3 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

5.23. buk7507-55b buk7607-55b.pdf Size:296K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/7607-55B TrenchMOS standard level FET Rev. 01 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-state resista

5.24. buk7508 buk7608-55a 1.pdf Size:68K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench technology w

5.25. buk7524-55 3.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 45 A features very low on-state resistanc

5.26. buk7516-55a buk7616-55a.pdf Size:306K _philips

BUK755R4-100E
BUK755R4-100E

BUK7516-55A; BUK7616-55A TrenchMOS standard level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

5.27. buk7510-55al.pdf Size:210K _philips

BUK755R4-100E
BUK755R4-100E

BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 03 4 August 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

5.28. buk7575-100a buk7675-100a.pdf Size:314K _philips

BUK755R4-100E
BUK755R4-100E

BUK7575-100A; BUK7675-100A TrenchMOS standard level FET Rev. 01 24 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7575-100A in SOT78 (TO-220AB) BUK7675-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolog

5.29. buk7575-55a buk7675-55a.pdf Size:334K _philips

BUK755R4-100E
BUK755R4-100E

BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

5.30. buk7506-55a buk7606-55a.pdf Size:320K _philips

BUK755R4-100E
BUK755R4-100E

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant

5.31. buk7507-30b buk7607-30b.pdf Size:298K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/7607-30B TrenchMOS standard level FET Rev. 01 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state resis

5.32. buk7509 buk7609 75a 02.pdf Size:318K _philips

BUK755R4-100E
BUK755R4-100E

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.33. buk754r3-40b buk764r3-40b.pdf Size:297K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/764R3-40B TrenchMOS standard level FET Rev. 01 09 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

5.34. buk7506-55a 1.pdf Size:51K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology which features ID Drain current (DC) 75 A very low on-state resistance. It

5.35. buk7535-100a buk7635-100a.pdf Size:337K _philips

BUK755R4-100E
BUK755R4-100E

BUK7535-100A; BUK7635-100A TrenchMOS standard level FET Rev. 01 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK). 2. Features TrenchMOS technolog

5.36. buk7508-55 2.pdf Size:51K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7508-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

5.37. buk7540-100a.pdf Size:227K _philips

BUK755R4-100E
BUK755R4-100E

BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

5.38. buk75150 buk76150 55a-01.pdf Size:302K _philips

BUK755R4-100E
BUK755R4-100E

BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK75150-55A in SOT78 (TO-220AB) BUK76150-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolo

5.39. buk7518-30 1.pdf Size:48K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 55 A features very low on-state resistanc

5.40. buk7524 buk7624 55a-01.pdf Size:313K _philips

BUK755R4-100E
BUK755R4-100E

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

5.41. buk7514-55a buk7614-55a.pdf Size:68K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench technology w

5.42. buk752r3-40c.pdf Size:222K _philips

BUK755R4-100E
BUK755R4-100E

BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance autom

5.43. buk7509-75a buk7609-75a.pdf Size:319K _philips

BUK755R4-100E
BUK755R4-100E

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.44. buk7524-55a buk7624-55a.pdf Size:314K _philips

BUK755R4-100E
BUK755R4-100E

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101

5.45. buk7514-55 2.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 68 A features very low on-state resistanc

5.46. buk7528-55a buk7628-55a.pdf Size:96K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench technology w

5.47. buk7520-55 2.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 52 A features very low on-state resistanc

5.48. buk754r3-75c buk7e4r3-75c.pdf Size:273K _philips

BUK755R4-100E
BUK755R4-100E

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard leve

5.49. buk7515-100a 1.pdf Size:50K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7515-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 75 A very low on-state resistance.

5.50. buk7505-30a.pdf Size:51K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7505-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology which features ID Drain current (DC) 75 A very low on-state resistance. It

5.51. buk7535-55a buk7635-55a.pdf Size:313K _philips

BUK755R4-100E
BUK755R4-100E

BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.52. buk7520-100a buk7620-100a.pdf Size:315K _philips

BUK755R4-100E
BUK755R4-100E

BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7520-100A in SOT78 (TO-220AB) BUK7620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolog

5.53. buk7514-30 1.pdf Size:50K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 69 A features very low on-state resistanc

5.54. buk754r0-55b buk764r0-55b.pdf Size:101K _philips

BUK755R4-100E
BUK755R4-100E

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level c

5.55. buk7526-100b buk7626-100b.pdf Size:294K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

5.56. buk7535-55 2.pdf Size:52K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7535-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 34 A features very low on-state resistanc

5.57. buk7506-75b buk7606-75b.pdf Size:322K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resista

5.58. buk7506-30 1.pdf Size:49K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7506-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

5.59. buk7509-55a buk7609-55a.pdf Size:314K _philips

BUK755R4-100E
BUK755R4-100E

BUK75/7609-55A TrenchMOS standard level FET Rev. 01 6 August 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7509-55A in SOT78 (TO-220AB) BUK7609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C

5.60. buk7575-55.pdf Size:53K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7575-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 19.7 A features very low on-state resista

5.61. buk7528 buk7628-100a.pdf Size:80K _philips

BUK755R4-100E
BUK755R4-100E

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench technolog

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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