BUK755R4-100E Datasheet. Specs and Replacement
Type Designator: BUK755R4-100E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 770 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TO-220AB
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isc N-Channel MOSFET Transistor BUK7506-55A FEATURES Static drain-source on-resistance RDS(on) 6.3m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive and general purpose power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒
Detailed specifications: BUK751R8-40E, BUK7524-55A, BUK752R3-40E, BUK752R7-60E, BUK753R1-40E, BUK753R5-60E, BUK753R8-80E, BUK754R7-60E, 75N75, BUK758R3-40E, BUK7605-30A, BUK7613-100E, BUK7613-60E, BUK7614-55, BUK76150-55A, BUK7615-100A, BUK7616-55A
Keywords - BUK755R4-100E MOSFET specs
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