BUK761R3-30E PDF and Equivalents Search

 

BUK761R3-30E Specs and Replacement

Type Designator: BUK761R3-30E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 2020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: D2PAK

BUK761R3-30E substitution

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BUK761R3-30E datasheet

 ..1. Size:235K  nxp
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BUK761R3-30E

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 7.1. Size:203K  philips
buk761r8-30c.pdf pdf_icon

BUK761R3-30E

BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol... See More ⇒

 7.2. Size:257K  nxp
buk761r5-40e.pdf pdf_icon

BUK761R3-30E

BUK761R5-40E N-channel TrenchMOS standard level FET 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒

 7.3. Size:250K  nxp
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BUK761R3-30E

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Detailed specifications: BUK758R3-40E, BUK7605-30A, BUK7613-100E, BUK7613-60E, BUK7614-55, BUK76150-55A, BUK7615-100A, BUK7616-55A, IRF840, BUK761R4-30E, BUK761R5-40E, BUK761R6-40E, BUK761R7-40E, BUK762R0-40E, BUK762R4-60E, BUK762R6-40E, BUK762R6-60E

Keywords - BUK761R3-30E MOSFET specs

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