BUK761R3-30E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK761R3-30E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 357 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 154 nC
Время нарастания (tr): 64 ns
Выходная емкость (Cd): 2020 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0013 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK761R3-30E
BUK761R3-30E Datasheet (PDF)
buk761r3-30e.pdf
BUK761R3-30EN-channel TrenchMOS standard level FETRev. 3 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
buk761r8-30c.pdf
BUK761R8-30CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol
buk761r5-40e.pdf
BUK761R5-40EN-channel TrenchMOS standard level FET7 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated
buk761r7-40e.pdf
BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated
buk761r4-30e.pdf
BUK761R4-30EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repeti
buk761r6-40e.pdf
BUK761R6-40EN-channel TrenchMOS standard level FET5 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rate
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