All MOSFET. BUK761R5-40E Datasheet

 

BUK761R5-40E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK761R5-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 145 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00151 Ohm
   Package: D2PAK

 BUK761R5-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK761R5-40E Datasheet (PDF)

 ..1. Size:257K  nxp
buk761r5-40e.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R5-40EN-channel TrenchMOS standard level FET7 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

 7.1. Size:203K  philips
buk761r8-30c.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R8-30CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol

 7.2. Size:250K  nxp
buk761r7-40e.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

 7.3. Size:235K  nxp
buk761r3-30e.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R3-30EN-channel TrenchMOS standard level FETRev. 3 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

 7.4. Size:209K  nxp
buk761r4-30e.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R4-30EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repeti

 7.5. Size:258K  nxp
buk761r6-40e.pdf

BUK761R5-40E
BUK761R5-40E

BUK761R6-40EN-channel TrenchMOS standard level FET5 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rate

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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