All MOSFET. BUK762R6-60E Datasheet

 

BUK762R6-60E Datasheet and Replacement


   Type Designator: BUK762R6-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 324 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 968 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: D2PAK
 

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BUK762R6-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk762r6-60e.pdf pdf_icon

BUK762R6-60E

BUK762R6-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.1. Size:210K  nxp
buk762r6-40e.pdf pdf_icon

BUK762R6-60E

BUK762R6-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:205K  philips
buk762r0-40c.pdf pdf_icon

BUK762R6-60E

BUK762R0-40CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f

 7.2. Size:210K  nxp
buk762r0-40e.pdf pdf_icon

BUK762R6-60E

BUK762R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

Datasheet: BUK761R3-30E , BUK761R4-30E , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , IRF1404 , BUK762R9-40E , BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E .

History: AP98T06GP | BUK7626-100B | BUK7510-100B | MDIB6N70CTH | PSMN2R0-60ES | JCS4N70F | MDI4N60BTH

Keywords - BUK762R6-60E MOSFET datasheet

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