Справочник MOSFET. BUK762R6-60E

 

BUK762R6-60E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK762R6-60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 324 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 968 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK762R6-60E Datasheet (PDF)

 ..1. Size:207K  nxp
 buk762r6-60e.pdf pdf_icon

BUK762R6-60E

BUK762R6-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.1. Size:210K  nxp
 buk762r6-40e.pdf pdf_icon

BUK762R6-60E

BUK762R6-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:205K  philips
 buk762r0-40c.pdf pdf_icon

BUK762R6-60E

BUK762R0-40CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard f

 7.2. Size:210K  nxp
 buk762r0-40e.pdf pdf_icon

BUK762R6-60E

BUK762R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

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History: SVS20N60FJD2

 

 
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