All MOSFET. BUK763R9-60E Datasheet

 

BUK763R9-60E Datasheet and Replacement


   Type Designator: BUK763R9-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 41.4 nS
   Cossⓘ - Output Capacitance: 737 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: D2PAK
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BUK763R9-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk763r9-60e.pdf pdf_icon

BUK763R9-60E

BUK763R9-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:104K  philips
buk763r4-30.pdf pdf_icon

BUK763R9-60E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 7.2. Size:323K  philips
buk753r1-40b buk763r1-40b.pdf pdf_icon

BUK763R9-60E

BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta

 7.3. Size:108K  philips
buk753r4-30b buk763r4-30b.pdf pdf_icon

BUK763R9-60E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SMK0160 | TPCA8047-H | NP180N04TUJ | APT10021JFLL | ZVN4210GTC | WMM07N65C4 | SM4186T9RL

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