BUK763R9-60E Specs and Replacement
Type Designator: BUK763R9-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 263 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41.4 nS
Cossⓘ - Output Capacitance: 737 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: D2PAK
BUK763R9-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK763R9-60E datasheet
buk763r9-60e.pdf
BUK763R9-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk763r4-30.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
buk753r1-40b buk763r1-40b.pdf
BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta... See More ⇒
buk753r4-30b buk763r4-30b.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
Detailed specifications: BUK762R4-60E, BUK762R6-40E, BUK762R6-60E, BUK762R9-40E, BUK7631-100E, BUK763R1-60E, BUK763R4-30, BUK763R8-80E, IRFB4227, BUK764R0-40E, BUK764R2-80E, BUK764R4-60E, BUK765R0-100E, BUK765R3-40E, BUK766R0-60E, BUK768R1-100E, BUK768R1-40E
Keywords - BUK763R9-60E MOSFET specs
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