BUK763R9-60E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK763R9-60E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 263 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 103 nC
trⓘ - Время нарастания: 41.4 ns
Cossⓘ - Выходная емкость: 737 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: D2PAK
- подбор MOSFET транзистора по параметрам
BUK763R9-60E Datasheet (PDF)
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BUK763R9-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
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BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
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BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta
buk753r4-30b buk763r4-30b.pdf

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
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