All MOSFET. BUK764R2-80E Datasheet

 

BUK764R2-80E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK764R2-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 324 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 136 nC
   trⓘ - Rise Time: 45.5 nS
   Cossⓘ - Output Capacitance: 753 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: D2PAK

 BUK764R2-80E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK764R2-80E Datasheet (PDF)

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