All MOSFET. BUK764R4-60E Datasheet

 

BUK764R4-60E Datasheet and Replacement


   Type Designator: BUK764R4-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 234 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 637 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: D2PAK
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BUK764R4-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk764r4-60e.pdf pdf_icon

BUK764R4-60E

BUK764R4-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:191K  philips
buk764r0-75c.pdf pdf_icon

BUK764R4-60E

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 7.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK764R4-60E

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 7.3. Size:297K  philips
buk754r3-40b buk764r3-40b.pdf pdf_icon

BUK764R4-60E

BUK75/764R3-40BTrenchMOS standard level FETRev. 01 09 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK754R3-40B in SOT78 (TO-220AB)BUK764R3-40B in SOT404 (D2-PAK).1.2 Features Very low on

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SWI50P03 | BUK7105-40ATE | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - BUK764R4-60E MOSFET datasheet

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