Справочник MOSFET. BUK764R4-60E

 

BUK764R4-60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK764R4-60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 234 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 82 nC
   trⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 637 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK764R4-60E

 

 

BUK764R4-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk764r4-60e.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R4-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:191K  philips
buk764r0-75c.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 7.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf

BUK764R4-60E
BUK764R4-60E

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 7.3. Size:297K  philips
buk754r3-40b buk764r3-40b.pdf

BUK764R4-60E
BUK764R4-60E

BUK75/764R3-40BTrenchMOS standard level FETRev. 01 09 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK754R3-40B in SOT78 (TO-220AB)BUK764R3-40B in SOT404 (D2-PAK).1.2 Features Very low on

 7.4. Size:212K  nxp
buk764r2-80e.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R2-80EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repeti

 7.5. Size:813K  nxp
buk764r0-75c.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 7.6. Size:210K  nxp
buk764r0-40e.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.7. Size:846K  nxp
buk764r0-55b.pdf

BUK764R4-60E
BUK764R4-60E

BUK764R0-55BN-channel TrenchMOS standard level FETRev. 5 22 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

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