All MOSFET. BUK765R3-40E Datasheet

 

BUK765R3-40E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK765R3-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 137 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 422 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: D2PAK

 BUK765R3-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK765R3-40E Datasheet (PDF)

 ..1. Size:207K  nxp
buk765r3-40e.pdf

BUK765R3-40E
BUK765R3-40E

BUK765R3-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.1. Size:292K  philips
buk755r2-40b buk765r2-40b.pdf

BUK765R3-40E
BUK765R3-40E

BUK75/765R2-40BTrenchMOS standard level FETRev. 01 14 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK755R2-40B in SOT78 (TO-220AB)BUK765R2-40B in SOT404 (D2-PAK).1.2 Features TrenchMOS

 7.2. Size:231K  nxp
buk765r0-100e.pdf

BUK765R3-40E
BUK765R3-40E

BUK765R0-100EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

 7.3. Size:744K  nxp
buk765r2-40b.pdf

BUK765R3-40E
BUK765R3-40E

BUK765R2-40BN-channel TrenchMOS standard level FETRev. 3 22 November 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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