BUK765R3-40E. Аналоги и основные параметры
Наименование производителя: BUK765R3-40E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 137 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 422 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK765R3-40E
- подборⓘ MOSFET транзистора по параметрам
BUK765R3-40E даташит
buk765r3-40e.pdf
BUK765R3-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk755r2-40b buk765r2-40b.pdf
BUK75/765R2-40B TrenchMOS standard level FET Rev. 01 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK755R2-40B in SOT78 (TO-220AB) BUK765R2-40B in SOT404 (D2-PAK). 1.2 Features TrenchMOS
buk765r0-100e.pdf
BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant
buk765r2-40b.pdf
BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 22 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
Другие MOSFET... BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , 2N7000 , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , BUK7E13-60E , BUK7E1R6-30E , BUK7E1R8-40E .
History: TPC8115 | HM4886E
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Список транзисторов
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