BUK7K6R8-40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7K6R8-40E
Marking Code: *76E840
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 64
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28.9
nC
trⓘ - Rise Time: 15.4
nS
Cossⓘ -
Output Capacitance: 324
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068
Ohm
Package: LFPAK56D
BUK7K6R8-40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7K6R8-40E
Datasheet (PDF)
..1. Size:294K nxp
buk7k6r8-40e.pdf
BUK7K6R8-40EDual N-channel 40 V, 6.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
7.1. Size:336K nxp
buk7k6r2-40e.pdf
BUK7K6R2-40EDual N-channel 40 V, 5.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.1. Size:713K nxp
buk7k134-100e.pdf
BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.2. Size:255K nxp
buk7k17-80e.pdf
BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
9.3. Size:253K nxp
buk7k15-80e.pdf
BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
9.4. Size:325K nxp
buk7k12-60e.pdf
BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.5. Size:716K nxp
buk7k45-100e.pdf
BUK7K45-100EDual N-channel 100 V, 37.6 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.6. Size:304K nxp
buk7k5r6-30e.pdf
BUK7K5R6-30EDual N-channel 30 V, 5.6 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.7. Size:296K nxp
buk7k5r1-30e.pdf
BUK7K5R1-30EDual N-channel 30 V, 5.1 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.8. Size:301K nxp
buk7k52-60e.pdf
BUK7K52-60EDual N-channel 60 V, 45 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.9. Size:264K nxp
buk7k23-80e.pdf
BUK7K23-80EDual N-channel 80 V, 23 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
9.10. Size:308K nxp
buk7k18-40e.pdf
BUK7K18-40EDual N-channel 40 V, 19 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.11. Size:712K nxp
buk7k32-100e.pdf
BUK7K32-100EDual N-channel 100 V, 27.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.12. Size:286K nxp
buk7k25-40e.pdf
BUK7K25-40EDual N-channel TrenchMOS standard level FET23 April 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche r
9.13. Size:712K nxp
buk7k29-100e.pdf
BUK7K29-100EDual N-channel 100 V, 24.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.14. Size:336K nxp
buk7k8r7-40e.pdf
BUK7K8R7-40EDual N-channel 40 V, 8.5 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.15. Size:336K nxp
buk7k17-60e.pdf
BUK7K17-60EDual N-channel 60 V, 14 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.16. Size:716K nxp
buk7k89-100e.pdf
BUK7K89-100EDual N-channel 100 V, 82.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.17. Size:311K nxp
buk7k35-60e.pdf
BUK7K35-60EDual N-channel 60 V, 30 m standard level MOSFET15 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.