Справочник MOSFET. BUK7K6R8-40E

 

BUK7K6R8-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7K6R8-40E
   Маркировка: *76E840
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 64 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 28.9 nC
   trⓘ - Время нарастания: 15.4 ns
   Cossⓘ - Выходная емкость: 324 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: LFPAK56D

 Аналог (замена) для BUK7K6R8-40E

 

 

BUK7K6R8-40E Datasheet (PDF)

 ..1. Size:294K  nxp
buk7k6r8-40e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K6R8-40EDual N-channel 40 V, 6.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 7.1. Size:336K  nxp
buk7k6r2-40e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K6R2-40EDual N-channel 40 V, 5.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.1. Size:713K  nxp
buk7k134-100e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.2. Size:255K  nxp
buk7k17-80e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC

 9.3. Size:253K  nxp
buk7k15-80e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC

 9.4. Size:325K  nxp
buk7k12-60e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.5. Size:716K  nxp
buk7k45-100e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K45-100EDual N-channel 100 V, 37.6 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.6. Size:304K  nxp
buk7k5r6-30e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K5R6-30EDual N-channel 30 V, 5.6 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.7. Size:296K  nxp
buk7k5r1-30e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K5R1-30EDual N-channel 30 V, 5.1 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.8. Size:301K  nxp
buk7k52-60e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K52-60EDual N-channel 60 V, 45 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.9. Size:264K  nxp
buk7k23-80e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K23-80EDual N-channel 80 V, 23 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC

 9.10. Size:308K  nxp
buk7k18-40e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K18-40EDual N-channel 40 V, 19 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.11. Size:712K  nxp
buk7k32-100e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K32-100EDual N-channel 100 V, 27.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.12. Size:286K  nxp
buk7k25-40e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K25-40EDual N-channel TrenchMOS standard level FET23 April 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche r

 9.13. Size:712K  nxp
buk7k29-100e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K29-100EDual N-channel 100 V, 24.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.14. Size:336K  nxp
buk7k8r7-40e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K8R7-40EDual N-channel 40 V, 8.5 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.15. Size:336K  nxp
buk7k17-60e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K17-60EDual N-channel 60 V, 14 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.16. Size:716K  nxp
buk7k89-100e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K89-100EDual N-channel 100 V, 82.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.17. Size:311K  nxp
buk7k35-60e.pdf

BUK7K6R8-40E
BUK7K6R8-40E

BUK7K35-60EDual N-channel 60 V, 30 m standard level MOSFET15 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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