BUK7Y14-80E PDF and Equivalents Search

 

BUK7Y14-80E Specs and Replacement

Type Designator: BUK7Y14-80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.2 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: LFPAK56 POWER-SO8

BUK7Y14-80E substitution

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BUK7Y14-80E datasheet

 ..1. Size:343K  nxp
buk7y14-80e.pdf pdf_icon

BUK7Y14-80E

BUK7Y14-80E N-channel 80 V, 14 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

 8.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y14-80E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

 8.2. Size:268K  nxp
buk7y1r4-40h.pdf pdf_icon

BUK7Y14-80E

BUK7Y1R4-40H N-channel 40 V, 1.4 m standard level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea... See More ⇒

 8.3. Size:784K  nxp
buk7y18-55b.pdf pdf_icon

BUK7Y14-80E

BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

Detailed specifications: BUK7K5R1-30E, BUK7K5R6-30E, BUK7K6R2-40E, BUK7K6R8-40E, BUK7K8R7-40E, BUK7Y113-100E, BUK7Y12-100E, BUK7Y12-40E, STP80NF70, BUK7Y15-100E, BUK7Y153-100E, BUK7Y15-60E, BUK7Y19-100E, BUK7Y21-40E, BUK7Y22-100E, BUK7Y25-60E, BUK7Y25-80E

Keywords - BUK7Y14-80E MOSFET specs

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