All MOSFET. BUK7Y14-80E Datasheet

 

BUK7Y14-80E Datasheet and Replacement


   Type Designator: BUK7Y14-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: LFPAK56 POWER-SO8
      - MOSFET Cross-Reference Search

 

BUK7Y14-80E Datasheet (PDF)

 ..1. Size:343K  nxp
buk7y14-80e.pdf pdf_icon

BUK7Y14-80E

BUK7Y14-80EN-channel 80 V, 14 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

 8.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y14-80E

BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

 8.2. Size:268K  nxp
buk7y1r4-40h.pdf pdf_icon

BUK7Y14-80E

BUK7Y1R4-40HN-channel 40 V, 1.4 m standard level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Fea

 8.3. Size:784K  nxp
buk7y18-55b.pdf pdf_icon

BUK7Y14-80E

BUK7Y18-55BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - BUK7Y14-80E MOSFET datasheet

 BUK7Y14-80E cross reference
 BUK7Y14-80E equivalent finder
 BUK7Y14-80E lookup
 BUK7Y14-80E substitution
 BUK7Y14-80E replacement

 

 
Back to Top

 


 
.