BUK7Y14-80E - описание и поиск аналогов

 

BUK7Y14-80E. Аналоги и основные параметры

Наименование производителя: BUK7Y14-80E

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 147 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13.2 ns

Cossⓘ - Выходная емкость: 240 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm

Тип корпуса: LFPAK56 POWER-SO8

Аналог (замена) для BUK7Y14-80E

- подборⓘ MOSFET транзистора по параметрам

 

BUK7Y14-80E даташит

 ..1. Size:343K  nxp
buk7y14-80e.pdfpdf_icon

BUK7Y14-80E

BUK7Y14-80E N-channel 80 V, 14 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti

 8.1. Size:190K  philips
buk7y13-40b.pdfpdf_icon

BUK7Y14-80E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

 8.2. Size:268K  nxp
buk7y1r4-40h.pdfpdf_icon

BUK7Y14-80E

BUK7Y1R4-40H N-channel 40 V, 1.4 m standard level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea

 8.3. Size:784K  nxp
buk7y18-55b.pdfpdf_icon

BUK7Y14-80E

BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

Другие MOSFET... BUK7K5R1-30E , BUK7K5R6-30E , BUK7K6R2-40E , BUK7K6R8-40E , BUK7K8R7-40E , BUK7Y113-100E , BUK7Y12-100E , BUK7Y12-40E , STP80NF70 , BUK7Y15-100E , BUK7Y153-100E , BUK7Y15-60E , BUK7Y19-100E , BUK7Y21-40E , BUK7Y22-100E , BUK7Y25-60E , BUK7Y25-80E .

History: SDF08N50 | LNG7N65D | MTM55N10 | 2P524A9

 

 

 

 

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