NDB6060 Datasheet. Specs and Replacement

Type Designator: NDB6060  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO263

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NDB6060 datasheet

 ..1. Size:360K  fairchild semi
 ndp6060 ndb6060.pdf pdf_icon

NDB6060

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. ... See More ⇒

 ..2. Size:474K  onsemi
 ndp6060 ndb6060.pdf pdf_icon

NDB6060

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:360K  fairchild semi
 ndp6060l ndb6060l.pdf pdf_icon

NDB6060

April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This... See More ⇒

 0.2. Size:508K  onsemi
 ndp6060l ndb6060l.pdf pdf_icon

NDB6060

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH) ... See More ⇒

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Detailed specifications: NDB6030, NDB6030L, NDB6030PL, NDB603AL, NDB6050, NDB6050L, NDB6051, NDB6051L, IRF9640, NDB6060L, NDB608A, NDB610A, NDB7050, NDB7050L, NDB7051, NDB7051L, NDB7052

Keywords - NDB6060 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.