NDB6060 PDF and Equivalents Search

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. ... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This... See More ⇒

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH) ... See More ⇒

isc N-Channel MOSFET Transistor NDB6060L FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒