All MOSFET. BUK7Y65-100E Datasheet

 

BUK7Y65-100E Datasheet and Replacement


   Type Designator: BUK7Y65-100E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 99.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK7Y65-100E Datasheet (PDF)

 ..1. Size:313K  nxp
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BUK7Y65-100E

BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

 8.1. Size:299K  nxp
buk7y6r0-60e.pdf pdf_icon

BUK7Y65-100E

BUK7Y6R0-60EN-channel 60 V, 6.0 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

 9.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y65-100E

BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

 9.2. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y65-100E

BUK7Y25-40BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

Datasheet: BUK7Y29-40E , BUK7Y38-100E , BUK7Y3R5-40E , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , IRFB31N20D , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E .

History: 2SJ596 | IRFM250D | HGP210N20S | AOD600A70 | NP180N055TUJ | 2SK3354-Z | 2SK2024-01

Keywords - BUK7Y65-100E MOSFET datasheet

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