BUK7Y6R0-60E PDF and Equivalents Search

 

BUK7Y6R0-60E Specs and Replacement


   Type Designator: BUK7Y6R0-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 392 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK7Y6R0-60E datasheet

 ..1. Size:299K  nxp
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BUK7Y6R0-60E

BUK7Y6R0-60E N-channel 60 V, 6.0 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

 8.1. Size:313K  nxp
buk7y65-100e.pdf pdf_icon

BUK7Y6R0-60E

BUK7Y65-100E N-channel 100 V, 65 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

 9.1. Size:190K  philips
buk7y13-40b.pdf pdf_icon

BUK7Y6R0-60E

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au... See More ⇒

 9.2. Size:806K  nxp
buk7y25-40b.pdf pdf_icon

BUK7Y6R0-60E

BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use ... See More ⇒

Detailed specifications: BUK7Y38-100E , BUK7Y3R5-40E , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , BUK7Y65-100E , STF13NM60N , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E , BUK9506-55A .

Keywords - BUK7Y6R0-60E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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