BUK7Y7R8-80E MOSFET Datasheet: N-Ch, 80V, 100A. Full specification with pinout and replacement list

BUK7Y7R8-80E Specs and Replacement

Type Designator: BUK7Y7R8-80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 395 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: LFPAK56 POWER-SO8

BUK7Y7R8-80E substitution

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BUK7Y7R8-80E datasheet

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BUK7Y7R6-40E N-channel 40 V, 7.6 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe... See More ⇒

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BUK7Y72-80E N-channel 80 V, 72 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

Detailed specifications: BUK7Y4R4-40E, BUK7Y4R8-60E, BUK7Y59-60E, BUK7Y65-100E, BUK7Y6R0-60E, BUK7Y72-80E, BUK7Y7R2-60E, BUK7Y7R6-40E, P60NF06, BUK7Y8R7-60E, BUK7Y98-80E, BUK7Y9R9-80E, BUK9506-55A, BUK9508-55A, BUK9509-55A, BUK9515-60E, BUK9516