BUK7Y7R8-80E. Аналоги и основные параметры
Наименование производителя: BUK7Y7R8-80E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 238 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 395 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK7Y7R8-80E
- подборⓘ MOSFET транзистора по параметрам
BUK7Y7R8-80E даташит
buk7y7r8-80e.pdf
BUK7Y7R8-80E N-channel 80 V, 7.8 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y7r2-60e.pdf
BUK7Y7R2-60E N-channel 60 V, 7.2 m standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant
buk7y7r6-40e.pdf
BUK7Y7R6-40E N-channel 40 V, 7.6 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y72-80e.pdf
BUK7Y72-80E N-channel 80 V, 72 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
Другие MOSFET... BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , P60NF06 , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E , BUK9506-55A , BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 .
History: MDF11N60TH | FQI4N80 | IPD038N06N3
History: MDF11N60TH | FQI4N80 | IPD038N06N3
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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