BUK9506-55A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9506-55A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 154 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 180 nS
Drain-Source Capacitance (Cd): 1000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm
Package: TO-220AB
BUK9506-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9506-55A Datasheet (PDF)
0.1. buk9506-55a.pdf 
Size:332K _philips
BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).
6.1. buk9506-75b buk9606-75b.pdf Size:333K _philips
BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r
6.2. buk9506-30 1.pdf Size:48K _philips
Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
