BUK9506-55A MOSFET PDF: N-Ch, 55V, 154A. Datasheet. Full specification with pinout and replacement list

BUK9506-55A Specs and Replacement

   Type Designator: BUK9506-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 154 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO-220AB

BUK9506-55A substitution

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BUK9506-55A datasheet

..1. Size:332K philips
buk9506-55a.pdf pdf_icon

BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS logic level FET Rev. 03 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). ... See More ⇒

6.1. Size:333K philips
buk9506-75b buk9606-75b.pdf pdf_icon

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r... See More ⇒

6.2. Size:48K philips
buk9506-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resist... See More ⇒

7.1. Size:66K philips
buk9506 buk9606-55a 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo... See More ⇒

Detailed specifications: BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E , STP65NF06 , BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E , BUK952R8-60E .