BUK9506-55A Datasheet and Replacement. Cross Reference Search

BUK9506-55A Datasheet (PDF)

..1. Size:332K philips
buk9506-55a.pdf pdf_icon

BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).

6.1. Size:333K philips
buk9506-75b buk9606-75b.pdf pdf_icon

BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r

6.2. Size:48K philips
buk9506-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

7.1. Size:66K philips
buk9506 buk9606-55a 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

Datasheet: BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E , IRFZ48N , BUK9508-55A , BUK9509-55A , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E , BUK952R8-60E .