BUK954R4-80E Specs and Replacement
Type Designator: BUK954R4-80E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 109 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO-220AB
BUK954R4-80E substitution
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BUK954R4-80E datasheet
buk954r4-80e.pdf
BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf
BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application... See More ⇒
buk954r8-60e.pdf
BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
buk9540 buk9640-100a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench techn... See More ⇒
Detailed specifications: BUK9516, BUK951R6-30E, BUK9528-55A, BUK952R3-40E, BUK952R8-60E, BUK953R2-40E, BUK953R5-60E, BUK9540-100A, RU7088R, BUK954R8-60E, BUK956R1-100E, BUK958R5-40E, BUK9611-80E, BUK9614-60E, BUK96150-55A, BUK9615-100E, BUK961R4-30E
Keywords - BUK954R4-80E MOSFET specs
BUK954R4-80E cross reference
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BUK954R4-80E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BUK964R2-80E | BUK966R5-60E | BUK7Y7R6-40E | APM4354KP | BUK954R8-60E
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