BUK954R4-80E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK954R4-80E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 349 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 123 nC
trⓘ - Время нарастания: 109 ns
Cossⓘ - Выходная емкость: 850 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для BUK954R4-80E
BUK954R4-80E Datasheet (PDF)
buk954r4-80e.pdf
BUK954R4-80EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf
BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application
buk954r8-60e.pdf
BUK954R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
buk9540 buk9640-100a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 37 Atrench techn
buk9540-100a.pdf
BUK95/9640-100ATrenchMOS logic level FETRev. 03 08 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9540-100A in SOT78 (TO-220AB)BUK9640-100A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 comp
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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