BUK9614-60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9614-60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20.5
nC
trⓘ - Rise Time: 22.4
nS
Cossⓘ -
Output Capacitance: 196
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0128
Ohm
Package:
D2PAK
BUK9614-60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9614-60E
Datasheet (PDF)
..1. Size:206K nxp
buk9614-60e.pdf
BUK9614-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive aval
6.1. Size:50K philips
buk9614-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 69 AThedevice feat
6.2. Size:56K philips
buk9614-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 68 Athe device fea
6.3. Size:322K philips
buk9514-55a buk9614-55a.pdf
BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology
6.4. Size:769K nxp
buk9614-55a.pdf
BUK9614-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
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