BUK9614-60E - Даташиты. Аналоги. Основные параметры
Наименование производителя: BUK9614-60E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 22.4 ns
Cossⓘ - Выходная емкость: 196 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0128 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK9614-60E
BUK9614-60E Datasheet (PDF)
buk9614-60e.pdf

BUK9614-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive aval
buk9614-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 69 AThedevice feat
buk9614-55 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 68 Athe device fea
buk9514-55a buk9614-55a.pdf

BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology
Другие MOSFET... BUK953R2-40E , BUK953R5-60E , BUK9540-100A , BUK954R4-80E , BUK954R8-60E , BUK956R1-100E , BUK958R5-40E , BUK9611-80E , 5N50 , BUK96150-55A , BUK9615-100E , BUK961R4-30E , BUK961R5-30E , BUK961R6-40E , BUK961R7-40E , BUK9620-100A , BUK962R1-40E .
History: HSM3202 | INK021AAP1 | IRF7458PBF | NCE0260P | IXFL36N110P | NP88N055DLE | 2SK2553
History: HSM3202 | INK021AAP1 | IRF7458PBF | NCE0260P | IXFL36N110P | NP88N055DLE | 2SK2553



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor