All MOSFET. BUK962R8-60E Datasheet

 

BUK962R8-60E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK962R8-60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 324 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 96 nC

Rise Time (tr): 88 nS

Drain-Source Capacitance (Cd): 925 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm

Package: D2PAK

BUK962R8-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK962R8-60E Datasheet (PDF)

1.1. buk962r8-60e.pdf Size:208K _update_mosfet

BUK962R8-60E
BUK962R8-60E

BUK962R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

1.2. buk952r8-30b buk962r8-30b.pdf Size:340K _philips

BUK962R8-60E
BUK962R8-60E

BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) BUK962R8-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistanc

 3.1. buk962r6-40e.pdf Size:210K _update_mosfet

BUK962R8-60E
BUK962R8-60E

BUK962R6-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

3.2. buk962r1-40e.pdf Size:211K _update_mosfet

BUK962R8-60E
BUK962R8-60E

BUK962R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

 3.3. buk962r5-60e.pdf Size:239K _update_mosfet

BUK962R8-60E
BUK962R8-60E

BUK962R5-60E N-channel TrenchMOS logic level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Sui

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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