BUK962R8-60E. Аналоги и основные параметры
Наименование производителя: BUK962R8-60E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 324 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 88 ns
Cossⓘ - Выходная емкость: 925 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK962R8-60E
- подборⓘ MOSFET транзистора по параметрам
BUK962R8-60E даташит
buk962r8-60e.pdf
BUK962R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava
buk952r8-30b buk962r8-30b.pdf
BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK952R8-30B in SOT78 (TO-220AB) BUK962R8-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state
buk962r1-40e.pdf
BUK962R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava
buk962r5-60e.pdf
BUK962R5-60E N-channel TrenchMOS logic level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Sui
Другие MOSFET... BUK961R4-30E , BUK961R5-30E , BUK961R6-40E , BUK961R7-40E , BUK9620-100A , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , IRFP460 , BUK9637-100E , BUK963R1-40E , BUK963R3-60E , BUK964R1-40E , BUK964R2-60E , BUK964R2-80E , BUK964R7-80E , BUK964R8-60E .
History: RD3T050CN
History: RD3T050CN
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