All MOSFET. BUK9775-55A Datasheet

 

BUK9775-55A Datasheet and Replacement


   Type Designator: BUK9775-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-220F
 

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BUK9775-55A Datasheet (PDF)

 ..1. Size:135K  philips
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BUK9775-55A

BUK9775-55AN-channel TrenchMOS logic level FETRev. 02 10 June 2004 Product dataM3D3081. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9775-55A in SOT186A (TO-220F).2. Features TrenchMOS technology Q101 compliant 150 C rated

 4.1. Size:55K  philips
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BUK9775-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9775-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic full-pack envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 11.7 Afeatures very low on-

Datasheet: BUK964R7-80E , BUK964R8-60E , BUK965R4-40E , BUK965R8-100E , BUK966R5-60E , BUK968R3-40E , BUK969R0-60E , BUK969R3-100E , IRFB4115 , BUK9E15-60E , BUK9E1R6-30E , BUK9E1R9-40E , BUK9E2R3-40E , BUK9E2R8-60E , BUK9E3R2-40E , BUK9E3R7-60E , BUK9E4R4-80E .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - BUK9775-55A MOSFET datasheet

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