BUK9775-55A Specs and Replacement
Type Designator: BUK9775-55A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-220F
BUK9775-55A substitution
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BUK9775-55A datasheet
buk9775-55a.pdf
BUK9775-55A N-channel TrenchMOS logic level FET Rev. 02 10 June 2004 Product data M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9775-55A in SOT186A (TO-220F). 2. Features TrenchMOS technology Q101 compliant 150 C rated ... See More ⇒
buk9775-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9775-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic full-pack envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 11.7 A features very low on-... See More ⇒
Detailed specifications: BUK964R7-80E, BUK964R8-60E, BUK965R4-40E, BUK965R8-100E, BUK966R5-60E, BUK968R3-40E, BUK969R0-60E, BUK969R3-100E, P55NF06, BUK9E15-60E, BUK9E1R6-30E, BUK9E1R9-40E, BUK9E2R3-40E, BUK9E2R8-60E, BUK9E3R2-40E, BUK9E3R7-60E, BUK9E4R4-80E
Keywords - BUK9775-55A MOSFET specs
BUK9775-55A cross reference
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BUK9775-55A substitution
BUK9775-55A replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NTD4806N-1G | AP10P10GJ
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