BUK9E4R4-80E Spec and Replacement
Type Designator: BUK9E4R4-80E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 349
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id| ⓘ - Maximum Drain Current: 120
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 109
nS
Cossⓘ -
Output Capacitance: 850
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package:
I2PAK
BUK9E4R4-80E substitution
-
MOSFET ⓘ Cross-Reference Search
BUK9E4R4-80E Specs
..1. Size:213K nxp
buk9e4r4-80e.pdf 
BUK9E4R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
5.1. Size:318K philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf 
BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application... See More ⇒
7.1. Size:208K nxp
buk9e4r9-60e.pdf 
BUK9E4R9-60E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive a... See More ⇒
9.1. Size:358K philips
buk9504-40a buk9604-40a buk9e04-40a.pdf 
BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒
9.2. Size:199K philips
buk9e06-55a.pdf 
BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒
9.3. Size:325K philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf 
BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A... See More ⇒
9.4. Size:339K philips
buk9e08-55b.pdf 
BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒
9.5. Size:115K philips
buk95 buk96 buk9e06-55b.pdf 
BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compli... See More ⇒
9.6. Size:210K nxp
buk9e8r5-40e.pdf 
BUK9E8R5-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.7. Size:207K nxp
buk9e15-60e.pdf 
BUK9E15-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive... See More ⇒
9.8. Size:214K nxp
buk9e3r2-40e.pdf 
BUK9E3R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.9. Size:211K nxp
buk9e2r8-60e.pdf 
BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.10. Size:211K nxp
buk9e2r3-40e.pdf 
BUK9E2R3-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.11. Size:210K nxp
buk9e3r7-60e.pdf 
BUK9E3R7-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.12. Size:216K nxp
buk9e1r6-30e.pdf 
BUK9E1R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒
9.13. Size:968K nxp
buk9e08-55b.pdf 
BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒
9.14. Size:209K nxp
buk9e6r1-100e.pdf 
BUK9E6R1-100E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
9.15. Size:226K nxp
buk9e1r9-40e.pdf 
BUK9E1R9-40E N-channel 40 V, 1.9 m logic level MOSFET in I PAK 5 June 2013 Product data sheet 1. General description Logic level N-channel MOSFET in a I2PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche ... See More ⇒
Detailed specifications: BUK9775-55A
, BUK9E15-60E
, BUK9E1R6-30E
, BUK9E1R9-40E
, BUK9E2R3-40E
, BUK9E2R8-60E
, BUK9E3R2-40E
, BUK9E3R7-60E
, STP75NF75
, BUK9E4R9-60E
, BUK9E6R1-100E
, BUK9E8R5-40E
, BUK9K12-60E
, BUK9K134-100E
, BUK9K17-60E
, BUK9K18-40E
, BUK9K25-40E
.
History: GSM1023
Keywords - BUK9E4R4-80E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.