BUK9E4R4-80E Datasheet. Specs and Replacement

Type Designator: BUK9E4R4-80E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 349 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 109 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: I2PAK

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BUK9E4R4-80E datasheet

 ..1. Size:213K  nxp
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BUK9E4R4-80E

BUK9E4R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitiv... See More ⇒

 5.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf pdf_icon

BUK9E4R4-80E

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application... See More ⇒

 7.1. Size:208K  nxp
buk9e4r9-60e.pdf pdf_icon

BUK9E4R4-80E

BUK9E4R9-60E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive a... See More ⇒

 9.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E4R4-80E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒

Detailed specifications: BUK9775-55A, BUK9E15-60E, BUK9E1R6-30E, BUK9E1R9-40E, BUK9E2R3-40E, BUK9E2R8-60E, BUK9E3R2-40E, BUK9E3R7-60E, AON7408, BUK9E4R9-60E, BUK9E6R1-100E, BUK9E8R5-40E, BUK9K12-60E, BUK9K134-100E, BUK9K17-60E, BUK9K18-40E, BUK9K25-40E

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