BUK9E4R4-80E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9E4R4-80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 109 nS
Cossⓘ - Output Capacitance: 850 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: I2PAK
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