BUK9K17-60E PDF and Equivalents Search

 

BUK9K17-60E Specs and Replacement

Type Designator: BUK9K17-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm

Package: LFPAK56D

BUK9K17-60E substitution

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BUK9K17-60E datasheet

 ..1. Size:316K  nxp
buk9k17-60e.pdf pdf_icon

BUK9K17-60E

BUK9K17-60E Dual N-channel 60 V, 17 m logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Co... See More ⇒

 8.1. Size:295K  nxp
buk9k18-40e.pdf pdf_icon

BUK9K17-60E

BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

 8.2. Size:279K  nxp
buk9k12-60e.pdf pdf_icon

BUK9K17-60E

BUK9K12-60E Dual N-channel 60 V, 11.5 m logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 com... See More ⇒

 8.3. Size:330K  nxp
buk9k134-100e.pdf pdf_icon

BUK9K17-60E

BUK9K134-100E Dual N-channel 100 V, 159 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒

Detailed specifications: BUK9E3R2-40E, BUK9E3R7-60E, BUK9E4R4-80E, BUK9E4R9-60E, BUK9E6R1-100E, BUK9E8R5-40E, BUK9K12-60E, BUK9K134-100E, K3569, BUK9K18-40E, BUK9K25-40E, BUK9K29-100E, BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E

Keywords - BUK9K17-60E MOSFET specs

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