BUK9K17-60E Specs and Replacement
Type Designator: BUK9K17-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: LFPAK56D
BUK9K17-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK9K17-60E datasheet
buk9k17-60e.pdf
BUK9K17-60E Dual N-channel 60 V, 17 m logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Co... See More ⇒
buk9k18-40e.pdf
BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒
buk9k12-60e.pdf
BUK9K12-60E Dual N-channel 60 V, 11.5 m logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 com... See More ⇒
buk9k134-100e.pdf
BUK9K134-100E Dual N-channel 100 V, 159 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET ... See More ⇒
Detailed specifications: BUK9E3R2-40E, BUK9E3R7-60E, BUK9E4R4-80E, BUK9E4R9-60E, BUK9E6R1-100E, BUK9E8R5-40E, BUK9K12-60E, BUK9K134-100E, K3569, BUK9K18-40E, BUK9K25-40E, BUK9K29-100E, BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E
Keywords - BUK9K17-60E MOSFET specs
BUK9K17-60E cross reference
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BUK9K17-60E substitution
BUK9K17-60E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: NTD32N06LG | BUK762R9-40E | IXFH21N50F | BUK7K25-40E
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