BUK9K29-100E PDF and Equivalents Search

 

BUK9K29-100E Specs and Replacement

Type Designator: BUK9K29-100E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 169 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: LFPAK56D

BUK9K29-100E substitution

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BUK9K29-100E datasheet

 ..1. Size:305K  nxp
 buk9k29-100e.pdf pdf_icon

BUK9K29-100E

BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

 8.1. Size:258K  nxp
 buk9k22-80e.pdf pdf_icon

BUK9K29-100E

BUK9K22-80E Dual N-channel 80 V, 22 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒

 8.2. Size:263K  nxp
 buk9k20-80e.pdf pdf_icon

BUK9K29-100E

BUK9K20-80E Dual N-channel 80 V, 20 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒

 8.3. Size:314K  nxp
 buk9k25-40e.pdf pdf_icon

BUK9K29-100E

BUK9K25-40E Dual N-channel 40 V, 29 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q10... See More ⇒

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Detailed specifications: BUK9E4R9-60E, BUK9E6R1-100E, BUK9E8R5-40E, BUK9K12-60E, BUK9K134-100E, BUK9K17-60E, BUK9K18-40E, BUK9K25-40E, SPP20N60C3, BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E, BUK9K6R8-40E, BUK9K89-100E, BUK9K8R7-40E

Keywords - BUK9K29-100E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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