BUK9K29-100E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK9K29-100E
Маркировка: 9291E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 54 nC
trⓘ - Время нарастания: 6.4 ns
Cossⓘ - Выходная емкость: 169 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
Тип корпуса: LFPAK56D
Аналог (замена) для BUK9K29-100E
BUK9K29-100E Datasheet (PDF)
buk9k29-100e.pdf
BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
buk9k22-80e.pdf
BUK9K22-80EDual N-channel 80 V, 22 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
buk9k20-80e.pdf
BUK9K20-80EDual N-channel 80 V, 20 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
buk9k25-40e.pdf
BUK9K25-40EDual N-channel 40 V, 29 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q10
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: JCS8N60SB | SI7370ADP
History: JCS8N60SB | SI7370ADP
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918