NDB7060 Specs and Replacement
Type Designator: NDB7060
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO263
NDB7060 substitution
NDB7060 datasheet
ndp7060 ndb7060.pdf
May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is tempe... See More ⇒
ndp7060 ndb7060.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
ndb708ae ndb708b ndb708be ndp708ae ndp708b ndp708be.pdf
May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell dens... See More ⇒
Detailed specifications: NDB608A , NDB610A , NDB7050 , NDB7050L , NDB7051 , NDB7051L , NDB7052 , NDB7052L , IRF540 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , NDC651N .
Keywords - NDB7060 MOSFET specs
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