BUK9Y3R0-40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9Y3R0-40E
Marking Code: *93E040
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 194
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35.5
nC
trⓘ - Rise Time: 44
nS
Cossⓘ -
Output Capacitance: 563
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025
Ohm
Package:
LFPAK56
POWER-SO8
BUK9Y3R0-40E
Datasheet (PDF)
..1. Size:262K nxp
buk9y3r0-40e.pdf
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7.1. Size:268K nxp
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8.1. Size:665K nxp
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BUK9Y30-75BN-channel TrenchMOS logic level FETRev. 04 10 April 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature
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