BUK9Y3R0-40E MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

BUK9Y3R0-40E Specs and Replacement

Type Designator: BUK9Y3R0-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 194 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 563 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: LFPAK56 POWER-SO8

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BUK9Y3R0-40E datasheet

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BUK9Y38-100E N-channel 100 V, 38 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒

Detailed specifications: BUK9Y15-60E, BUK9Y19-100E, BUK9Y21-40E, BUK9Y22-100E, BUK9Y25-60E, BUK9Y25-80E, BUK9Y29-40E, BUK9Y38-100E, RFP50N06, BUK9Y3R5-40E, BUK9Y41-80E, BUK9Y43-60E, BUK9Y4R4-40E, BUK9Y4R8-60E, BUK9Y59-60E, BUK9Y65-100E, BUK9Y6R0-60E