BUK9Y3R0-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK9Y3R0-40E
Маркировка: *93E040
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 194 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 35.5 nC
Время нарастания (tr): 44 ns
Выходная емкость (Cd): 563 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0025 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK9Y3R0-40E
BUK9Y3R0-40E Datasheet (PDF)
buk9y3r0-40e.pdf
BUK9Y3R0-40EN-channel 40 V 3.0 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti
buk9y3r5-40e.pdf
BUK9Y3R5-40EN-channel 40 V, 3.8 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 Compliant Repe
buk9y30-75b.pdf
BUK9Y30-75BN-channel TrenchMOS logic level FETRev. 04 10 April 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature
buk9y38-100e.pdf
BUK9Y38-100EN-channel 100 V, 38 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
