All MOSFET. BUK9Y41-80E Datasheet

 

BUK9Y41-80E Datasheet and Replacement


   Type Designator: BUK9Y41-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK9Y41-80E Datasheet (PDF)

 ..1. Size:347K  nxp
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BUK9Y41-80E

BUK9Y41-80EN-channel 80 V, 45 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.1. Size:732K  nxp
buk9y40-55b.pdf pdf_icon

BUK9Y41-80E

BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 22 February 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i

 8.2. Size:297K  nxp
buk9y4r4-40e.pdf pdf_icon

BUK9Y41-80E

BUK9Y4R4-40EN-channel 40 V, 4.4 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.3. Size:344K  nxp
buk9y43-60e.pdf pdf_icon

BUK9Y41-80E

BUK9Y43-60EN-channel 60 V, 43 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

Datasheet: BUK9Y21-40E , BUK9Y22-100E , BUK9Y25-60E , BUK9Y25-80E , BUK9Y29-40E , BUK9Y38-100E , BUK9Y3R0-40E , BUK9Y3R5-40E , 7N60 , BUK9Y43-60E , BUK9Y4R4-40E , BUK9Y4R8-60E , BUK9Y59-60E , BUK9Y65-100E , BUK9Y6R0-60E , BUK9Y72-80E , BUK9Y7R2-60E .

History: AM1590CE | SHD226405

Keywords - BUK9Y41-80E MOSFET datasheet

 BUK9Y41-80E cross reference
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