BUK9Y41-80E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9Y41-80E
Marking Code: 94180E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 64
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 11.9
nC
trⓘ - Rise Time: 11.2
nS
Cossⓘ -
Output Capacitance: 99
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041
Ohm
Package:
LFPAK56
POWER-SO8
BUK9Y41-80E
Datasheet (PDF)
..1. Size:347K nxp
buk9y41-80e.pdf
BUK9Y41-80EN-channel 80 V, 45 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a
8.1. Size:732K nxp
buk9y40-55b.pdf
BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 22 February 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i
8.2. Size:297K nxp
buk9y4r4-40e.pdf
BUK9Y4R4-40EN-channel 40 V, 4.4 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive
8.3. Size:344K nxp
buk9y43-60e.pdf
BUK9Y43-60EN-channel 60 V, 43 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a
8.4. Size:298K nxp
buk9y4r8-60e.pdf
BUK9Y4R8-60EN-channel 60 V, 4.8 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive
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