BUK9Y41-80E. Аналоги и основные параметры
Наименование производителя: BUK9Y41-80E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 64 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11.2 ns
Cossⓘ - Выходная емкость: 99 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK9Y41-80E
- подборⓘ MOSFET транзистора по параметрам
BUK9Y41-80E даташит
buk9y41-80e.pdf
BUK9Y41-80E N-channel 80 V, 45 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a
buk9y40-55b.pdf
BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i
buk9y4r4-40e.pdf
BUK9Y4R4-40E N-channel 40 V, 4.4 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive
buk9y43-60e.pdf
BUK9Y43-60E N-channel 60 V, 43 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a
Другие MOSFET... BUK9Y21-40E , BUK9Y22-100E , BUK9Y25-60E , BUK9Y25-80E , BUK9Y29-40E , BUK9Y38-100E , BUK9Y3R0-40E , BUK9Y3R5-40E , AO3407 , BUK9Y43-60E , BUK9Y4R4-40E , BUK9Y4R8-60E , BUK9Y59-60E , BUK9Y65-100E , BUK9Y6R0-60E , BUK9Y72-80E , BUK9Y7R2-60E .
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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