All MOSFET. NDB7060L Datasheet

 

NDB7060L Datasheet and Replacement


   Type Designator: NDB7060L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
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NDB7060L Datasheet (PDF)

 7.1. Size:62K  fairchild semi
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NDB7060L

May 1996 NDP7060 / NDB7060N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cellCritical DC electrical parameters specified at elevateddensity, DMOS technology. This very high density process istempe

 7.2. Size:174K  onsemi
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NDB7060L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:58K  fairchild semi
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NDB7060L

May 1994 NDP708A / NDP708AE / NDP708B / NDP708BENDB708A / NDB708AE / NDB708B / NDB708BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field60 and 54A, 80V. RDS(ON) = 0.022 and 0.025. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell dens

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HYG055N08NS1C2 | KSO200P03S | IXTP6N60A | MDP7N60TH | HGB037N10S | BUK7880-55A | SI2301B

Keywords - NDB7060L MOSFET datasheet

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