NDB7061L
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDB7061L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO263
NDB7061L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDB7061L
Datasheet (PDF)
8.1. Size:62K fairchild semi
ndp7060 ndb7060.pdf 
May 1996 NDP7060 / NDB7060N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cellCritical DC electrical parameters specified at elevateddensity, DMOS technology. This very high density process istempe
8.2. Size:174K onsemi
ndp7060 ndb7060.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:58K fairchild semi
ndb708ae ndb708b ndb708be ndp708ae ndp708b ndp708be.pdf
May 1994 NDP708A / NDP708AE / NDP708B / NDP708BENDB708A / NDB708AE / NDB708B / NDB708BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field60 and 54A, 80V. RDS(ON) = 0.022 and 0.025. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell dens
Datasheet: IRFP344
, IRFP350
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