BUZ104S MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ104S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13.5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 9.5 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 95 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: TO-220AB
BUZ104S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ104S Datasheet (PDF)
1.1. buz104s.pdf 
Size:91K _update_mosfet
查询BUZ104S供应商 查询BUZ104S供应商 BUZ 104 S SPP14N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 104 S 55 V 13.5 A 0.1 Ω TO-220 AB Q67040-S4007-A2 Maximum Ratings Parameter Symbol Valu
1.2. buz104sl.pdf Size:129K _infineon
BUZ 104SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.064 RDS(on) ? Enhancement mode Continuous drain current 12.5 A ID Avalanche rated Logic Level dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ104SL P-TO220-3-1 Q67040-S4006-A2 T
1.3. buz104s.pdf Size:129K _infineon
BUZ 104S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.08 RDS(on) ? Enhancement mode Continuous drain current 13.5 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ104S P-TO220-3-1 Q67040-S4007-A2 Tube BUZ104S E3045
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