All MOSFET. BUZ111SL Datasheet

 

BUZ111SL MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ111SL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 14 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 155 nC

Rise Time (tr): 37 nS

Drain-Source Capacitance (Cd): 1090 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-220AB

BUZ111SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUZ111SL Datasheet (PDF)

1.1. buz111sl.pdf Size:77K _update_mosfet

BUZ111SL
BUZ111SL

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

1.2. buz111sl.pdf Size:101K _infineon

BUZ111SL
BUZ111SL

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

 3.1. buz111s.pdf Size:112K _update_mosfet

BUZ111SL
BUZ111SL

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

3.2. buz111s.pdf Size:103K _infineon

BUZ111SL
BUZ111SL

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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