BUZ231 Specs and Replacement

Type Designator: BUZ231

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO-204AA

BUZ231 substitution

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BUZ231 datasheet

 ..1. Size:176K  siemens
 buz231.pdf pdf_icon

BUZ231

BUZ231 ... See More ⇒

 9.1. Size:223K  inchange semiconductor
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BUZ231

isc N-Channel Mosfet Transistor BUZ23 FEATURES Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for... See More ⇒

Detailed specifications: BUZ206, BUZ210, BUZ215, BUZ216, BUZ21L, BUZ22, BUZ220, BUZ221, IRFB4227, BUZ255, BUZ272, BUZ305, BUZ307, BUZ308, BUZ30A, BUZ31, BUZ310

Keywords - BUZ231 MOSFET specs

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