All MOSFET. BUZ231 Datasheet

 

BUZ231 Datasheet and Replacement


   Type Designator: BUZ231
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-204AA
 

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BUZ231 Datasheet (PDF)

 ..1. Size:176K  siemens
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BUZ231

BUZ231

 9.1. Size:223K  inchange semiconductor
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BUZ231

isc N-Channel Mosfet Transistor BUZ23FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

Datasheet: BUZ206 , BUZ210 , BUZ215 , BUZ216 , BUZ21L , BUZ22 , BUZ220 , BUZ221 , AON6414A , BUZ255 , BUZ272 , BUZ305 , BUZ307 , BUZ308 , BUZ30A , BUZ31 , BUZ310 .

History: APT50M75LFLL | IPI60R190C6 | VN67AK | TPC8104

Keywords - BUZ231 MOSFET datasheet

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