All MOSFET. BUZ231 Datasheet

 

BUZ231 Datasheet and Replacement


   Type Designator: BUZ231
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-204AA
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BUZ231 Datasheet (PDF)

 ..1. Size:176K  siemens
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BUZ231

BUZ231

 9.1. Size:223K  inchange semiconductor
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BUZ231

isc N-Channel Mosfet Transistor BUZ23FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: ME20N10 | KNB2710A | STD50N03L-1 | STD4NK60Z | ME95N03 | KF5N53F | PDNM6ET20V05

Keywords - BUZ231 MOSFET datasheet

 BUZ231 cross reference
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