BUZ356 Specs and Replacement

Type Designator: BUZ356

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-218AA

BUZ356 substitution

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BUZ356 datasheet

 ..1. Size:207K  siemens
buz356.pdf pdf_icon

BUZ356

BUZ 356 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 356 800 V 5.3 A 2 TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 5.3 Pulsed drain current IDpuls TC = 25 C 21 Avalanche current,limited by Tjmax IAR ... See More ⇒

 ..2. Size:489K  siemens
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BUZ356

SIPMOS Power Transistors BUZ 355 BUZ 356 N channel Enhancement mode 1) Type VDS ID TC RDS (on) Package Ordering Code BUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2 BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2 Maximum Ratings Parameter Symbol BUZ Unit 355 356 Continuous drain current ID 6.0 5.3 A Pulsed drain current, TC = 25 C ID puls 21 Drain so... See More ⇒

 9.1. Size:280K  st
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BUZ356

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 9.2. Size:264K  st
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BUZ356

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Detailed specifications: BUZ342, BUZ345, BUZ346S2, BUZ348, BUZ349, BUZ350, BUZ351, BUZ355, K4145, BUZ357, BUZ358, BUZ360, BUZ37, BUZ381, BUZ383, BUZ385, BUZ40B

Keywords - BUZ356 MOSFET specs

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