BUZ356 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ356
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO-218AA
BUZ356 Datasheet (PDF)
buz356.pdf
BUZ 356SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 356 800 V 5.3 A 2 TO-218 AA C67078-S3108-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 5.3Pulsed drain current IDpulsTC = 25 C 21Avalanche current,limited by Tjmax IAR
buz355 buz356.pdf
SIPMOS Power Transistors BUZ 355BUZ 356 N channel Enhancement mode1)Type VDS ID TC RDS (on) Package Ordering CodeBUZ 355 800 V 6.0 A 29 C 1.5 TO-218 AA C67078-A3107-A2BUZ 356 800 V 5.3 A 25 C 2.0 TO-218 AA C67078-A3108-A2Maximum RatingsParameter Symbol BUZ Unit355 356Continuous drain current ID 6.0 5.3 APulsed drain current, TC = 25 C ID puls 21Drain so
buz355.pdf
BUZ 355SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 355 800 V 6 A 1.5 TO-218 AA C67078-S3107-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 6Pulsed drain current IDpulsTC = 25 C 24Avalanche current,limited by Tjmax IAR 5.
buz358.pdf
BUZ 358SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax I
buz357 buz358.pdf
SIPMOS Power Transistors BUZ 357BUZ 358 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol BUZ Unit357 358Continuous drain current, TC = 25 C ID 5.1 4.5 APulsed drain current, TC = 25 C ID p
buz350.pdf
BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 350 200 V 22 A 0.12 TO-218 AA C67078-S3117-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 22Pulsed drain current IDpulsTC = 25 C 88Avalanche current,limited by Tjmax I
buz35.pdf
isc N-Channel Mosfet Transistor BUZ35FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918